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Records 64,903

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Part Number	Description	In Stock
AT-64000-GP4 Broadcom	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V BIPOLAR CHIP Manufacturer: Broadcom Limited Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 110mA, 8V Current - Collector (Ic) (Max): 200mA Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: Die	In Stock430 More on Order
AT-64020 Broadcom	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 200SMD Manufacturer: Broadcom Limited Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 110mA, 8V Current - Collector (Ic) (Max): 200mA Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD (200 mil BeO)	In Stock144 More on Order
AT-64023 Broadcom	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 230 MIL BE0 Manufacturer: Broadcom Limited Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 110mA, 8V Current - Collector (Ic) (Max): 200mA Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD (230 mil BeO) Supplier Device Package: 230 mil Be0	In Stock441 More on Order
BF199 ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 25V 1.1GHZ TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 1.1GHz Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 38 @ 7mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock305 More on Order
BF199_D74Z ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 25V 1.1GHZ TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 1.1GHz Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 38 @ 7mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock267 More on Order
BF199_J35Z ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 25V 1.1GHZ TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 1.1GHz Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 38 @ 7mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock418 More on Order
BF240 ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 40V 1.1GHZ TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 1.1GHz Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V Current - Collector (Ic) (Max): 50mA Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock545 More on Order
BF240,112 NXP	Transistors - Bipolar (BJT) - RF RF TRANS NPN 40V 150MHZ TO92-3 Manufacturer: NXP USA Inc. Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 150MHz Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock508 More on Order
BF240_D74Z ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 40V 1.1GHZ TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 1.1GHz Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V Current - Collector (Ic) (Max): 50mA Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock306 More on Order
BF240_J35Z ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 40V 1.1GHZ TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 1.1GHz Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V Current - Collector (Ic) (Max): 50mA Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock484 More on Order
BF240_ND74Z ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 40V 1.1GHZ TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 1.1GHz Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V Current - Collector (Ic) (Max): 50mA Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock649 More on Order
BF494 ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock337 More on Order
BF494_D27Z ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock209 More on Order
BF494_D74Z ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock232 More on Order
BF 770A E6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 6GHZ SOT23-3 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz Gain: 9.5dB ~ 14.5dB Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 90mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock382 More on Order
BF771E6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT23-3 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Gain: 10dB ~ 15dB Power - Max: 580mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock515 More on Order
BF 775 E6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 5GHZ SOT23-3 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz Gain: 10.5dB ~ 16dB Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Current - Collector (Ic) (Max): 45mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock340 More on Order
BF776E6327FTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.7V 46GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 46GHz Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz Gain: 24dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 30mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock559 More on Order
BF776H6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.7V 46GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 46GHz Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz Gain: 24dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 30mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock4,193 More on Order
BF799E6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 800MHZ SOT23-3 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 800MHz Noise Figure (dB Typ @ f): 3dB @ 100MHz Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock506 More on Order
BF799WE6327BTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 800MHZ SOT323-3 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 800MHz Noise Figure (dB Typ @ f): 3dB @ 100MHz Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	In Stock241 More on Order
BF799WH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 800MHZ SOT323-3 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 800MHz Noise Figure (dB Typ @ f): 3dB @ 100MHz Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	In Stock232 More on Order
BF959 ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 700MHZ TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Power - Max: 625mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock607 More on Order
BF959G ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 700MHZ TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Power - Max: 625mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock466 More on Order
BF959RL1 ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 700MHZ TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Power - Max: 625mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock437 More on Order
BF959RL1G ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 700MHZ TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Power - Max: 625mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock135 More on Order
BF959ZL1 ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 700MHZ TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Power - Max: 625mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock532 More on Order
BF959ZL1G ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 700MHZ TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Power - Max: 625mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock485 More on Order
BFG10,215 NXP	Transistors - Bipolar (BJT) - RF RF TRANS NPN 8V 1.9GHZ SOT143B Manufacturer: NXP USA Inc. Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 8V Frequency - Transition: 1.9GHz Gain: 7dB Power - Max: 400mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V Current - Collector (Ic) (Max): 250mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	In Stock428 More on Order
BFG10W/X,115 NXP	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 1.9GHZ 4SO Manufacturer: NXP USA Inc. Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 1.9GHz Power - Max: 400mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V Current - Collector (Ic) (Max): 250mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343 Reverse Pinning Supplier Device Package: 4-SO	In Stock290 More on Order