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Part Number	Description	In Stock
BFP182RE7764HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT143R-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz Gain: 22dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-143R Supplier Device Package: PG-SOT143R-4	In Stock554 More on Order
BFP182WE6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz Gain: 22dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock435 More on Order
BFP182WH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz Gain: 22dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock486 More on Order
BFP183E7764HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT143-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz Gain: 22dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: PG-SOT143-4	In Stock8,682 More on Order
BFP183WE6327BTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz Gain: 22dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock478 More on Order
BFP183WH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8.5GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8.5GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz Gain: 22dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock12,321 More on Order
BFP193E6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT143-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Gain: 12dB ~ 18dB Power - Max: 580mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: PG-SOT143-4	In Stock8,704 More on Order
BFP193WE6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Gain: 13.5dB ~ 20.5dB Power - Max: 580mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock438 More on Order
BFP193WH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Gain: 13.5dB ~ 20.5dB Power - Max: 580mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock342 More on Order
BFP196E6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7.5GHZ SOT143-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7.5GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz Gain: 10.5dB ~ 16.5dB Power - Max: 700mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: PG-SOT143-4	In Stock13,877 More on Order
BFP 196R E6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7.5GHZ SOT143-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7.5GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz Gain: 10.5dB ~ 16.5dB Power - Max: 700mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: PG-SOT143-4	In Stock430 More on Order
BFP 196R E6501 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7.5GHZ SOT143-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7.5GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz Gain: 10.5dB ~ 16.5dB Power - Max: 700mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: PG-SOT143-4	In Stock233 More on Order
BFP196WE6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7.5GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7.5GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz Gain: 12.5dB ~ 19dB Power - Max: 700mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock283 More on Order
BFP196WH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7.5GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7.5GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz Gain: 12.5dB ~ 19dB Power - Max: 700mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock9,476 More on Order
BFP196WNH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7.5GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7.5GHz Noise Figure (dB Typ @ f): 1.3dB @ 900MHz Gain: 9.7dB Power - Max: 700mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock4,214 More on Order
BFP405E6327BTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 25GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz Gain: 23dB Power - Max: 75mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock316 More on Order
BFP405E6433HTMA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 25GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz Gain: 23dB Power - Max: 75mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock652 More on Order
BFP405E6740HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 25GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz Gain: 23dB Power - Max: 75mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock355 More on Order
BFP 405F E6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 25GHZ 4TSFP Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz Gain: 22.5dB Power - Max: 55mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V Current - Collector (Ic) (Max): 12mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	In Stock467 More on Order
BFP405FH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF TRANS RF NPN 4.5V 25MA TSFP-4 Manufacturer: Infineon Technologies Series: * Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	In Stock194 More on Order
BFP405H6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 25GHZ SOT343 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz Gain: 23dB Power - Max: 75mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	In Stock9,037 More on Order
BFP 405 H6433 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 25GHZ SOT343 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz Gain: 23dB Power - Max: 75mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	In Stock291 More on Order
BFP405H6740XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 25GHZ SOT343 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz Gain: 23dB Power - Max: 75mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	In Stock314 More on Order
BFP410H6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 25GHZ SOT343 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.2dB @ 2GHz Gain: 21.5dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 13mA, 2V Current - Collector (Ic) (Max): 40mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	In Stock228 More on Order
BFP420E6327BTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 25GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 21dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock478 More on Order
BFP420E6433HTMA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 25GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 21dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock362 More on Order
BFP 420F E6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 25GHZ 4TSFP Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 19.5dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	In Stock581 More on Order
BFP420FH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5.5V 25GHZ 4TSFP Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 19.5dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	In Stock14,369 More on Order
BFP420H6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 25GHZ SOT343 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 21dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	In Stock115,385 More on Order
BFP420H6433XTMA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 25GHZ SOT343 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 21dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	In Stock407 More on Order