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Part Number	Description	In Stock
BFP640FH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.5V 40GHZ 4TSFP Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 40GHz Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz Gain: 23dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	In Stock328 More on Order
BFP640H6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.5V 40GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 40GHz Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz Gain: 12.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock62,520 More on Order
BFP 640 H6433 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.5V 40GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 40GHz Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz Gain: 24dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock500 More on Order
BFP650 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.5V 37GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 37GHz Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz Gain: 10.5dB ~ 21.5dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V Current - Collector (Ic) (Max): 150mA Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock266 More on Order
BFP650E6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.5V 37GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 37GHz Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz Gain: 10.5dB ~ 21.5dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock425 More on Order
BFP 650F E6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.5V 42GHZ 4TSFP Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 42GHz Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz Gain: 11dB ~ 21.5dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	In Stock264 More on Order
BFP650FH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.5V 42GHZ 4TSFP Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 42GHz Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz Gain: 11dB ~ 21.5dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	In Stock22,083 More on Order
BFP650H6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.5V 37GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 37GHz Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz Gain: 10.5dB ~ 21.5dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock41,136 More on Order
BFP720ESDH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.7V 43GHZ SOT343 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 43GHz Noise Figure (dB Typ @ f): 0.55dB ~ 1.55dB @ 150MHz ~ 10GHz Gain: 11dB ~ 30.5dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 15mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	In Stock558 More on Order
BFP 720F E6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.7V 45GHZ 4TSFP Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.4dB ~ 1dB @ 150MHz ~ 10GHz Gain: 10.5dB ~ 28dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	In Stock323 More on Order
BFP 720FESD E6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.7V 45GHZ 4TSFP Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.5dB ~ 1.3dB @ 150MHz ~ 10GHz Gain: 10dB ~ 29dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 15mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	In Stock465 More on Order
BFP720FESDH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.7V 45GHZ 4TSFP Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.5dB ~ 1.3dB @ 150MHz ~ 10GHz Gain: 10dB ~ 29dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 15mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	In Stock273 More on Order
BFP720FH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.7V 45GHZ 4TSFP Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.4dB ~ 1dB @ 150MHz ~ 10GHz Gain: 10.5dB ~ 28dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	In Stock309 More on Order
BFP720H6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.7V 45GHZ SOT343 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.4dB ~ 0.95dB @ 150MHz ~ 10GHz Gain: 10.5dB ~ 28.5dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	In Stock214 More on Order
BFP740E6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.7V 42GHZ SOT343-4 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 42GHz Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz Gain: 27dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock356 More on Order
BFP740ESDH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.7V 45GHZ SOT343 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.55dB ~ 1.8dB @ 150MHz ~ 10GHz Gain: 8.5dB ~30.5dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V Current - Collector (Ic) (Max): 45mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	In Stock312 More on Order
BFP 740F E6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.7V 42GHZ 4TSFP Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 42GHz Noise Figure (dB Typ @ f): 0.5dB ~ 0.75dB @ 1.8GHz ~ 6GHz Gain: 27.5dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	In Stock447 More on Order
BFP 740FESD E6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.7V 47GHZ 4TSFP Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 47GHz Noise Figure (dB Typ @ f): 0.5dB ~ 1.45dB @ 150MHz ~ 10GHz Gain: 9dB ~ 31dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V Current - Collector (Ic) (Max): 45mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	In Stock316 More on Order
BFP740FESDH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.7V 47GHZ 4TSFP Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 47GHz Noise Figure (dB Typ @ f): 0.5dB ~ 1.45dB @ 150MHz ~ 10GHz Gain: 9dB ~ 31dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V Current - Collector (Ic) (Max): 45mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	In Stock8,284 More on Order
BFP740FH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.7V 42GHZ 4TSFP Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 42GHz Noise Figure (dB Typ @ f): 0.5dB ~ 0.75dB @ 1.8GHz ~ 6GHz Gain: 27.5dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	In Stock4,541 More on Order
BFP740H6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.7V 42GHZ SOT343 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 42GHz Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz Gain: 27dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	In Stock445 More on Order
BFP760H6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4V 45GHZ SOT343 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.5dB ~ 0.95dB @ 900MHz ~ 5.5GHz Gain: 16.5dB ~ 29dB Power - Max: 240mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 35mA, 3V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	In Stock3,713 More on Order
BFP780H6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 6.1V 900MHZ SOT343 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6.1V Frequency - Transition: 900MHz Noise Figure (dB Typ @ f): 1.2dB ~ 2.4dB @ 900MHz ~ 3.5GHz Gain: 27dB Power - Max: 600mW DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 90mA, 5V Current - Collector (Ic) (Max): 120mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT343-4-2	In Stock270 More on Order
BFP840ESDH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 2.25V 80GHZ SOT343 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.25V Frequency - Transition: 80GHz Noise Figure (dB Typ @ f): 0.85dB @ 5.5GHz Gain: 18.5dB Power - Max: 75mW DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	In Stock385 More on Order
BFP840FESDH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 2.6V 85GHZ 4TSFP Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.6V Frequency - Transition: 85GHz Noise Figure (dB Typ @ f): 0.75dB @ 5.5GHz Gain: 35dB Power - Max: 75mW DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: 4-TSFP	In Stock330 More on Order
BFP842ESDH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 3.7V 60GHZ SOT343 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.7V Frequency - Transition: 60GHz Noise Figure (dB Typ @ f): 0.65dB @ 3.5GHz Gain: 26dB Power - Max: 120mW DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 2.5V Current - Collector (Ic) (Max): 40mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	In Stock631 More on Order
BFP843FH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 2.25V TSFP-4-1 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.25V Noise Figure (dB Typ @ f): 0.8dB ~ 1.7dB @ 450MHz ~ 10GHz Gain: 13.5dB ~ 25dB Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V Current - Collector (Ic) (Max): 55mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: TSFP-4-1	In Stock323 More on Order
BFP843H6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 2.25V SOT343 Manufacturer: Infineon Technologies Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.25V Noise Figure (dB Typ @ f): 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz Gain: 13.5dB ~ 24.5dB Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V Current - Collector (Ic) (Max): 55mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	In Stock3,805 More on Order
BFQ149,115 NXP	Transistors - Bipolar (BJT) - RF RF TRANS PNP 15V 5GHZ SOT89-3 Manufacturer: NXP USA Inc. Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 3.3dB @ 500MHz Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 70mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	In Stock256 More on Order
BFQ18A,115 NXP	Transistors - Bipolar (BJT) - RF RF TRANS NPN 18V 4GHZ SOT89-3 Manufacturer: NXP USA Inc. Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 4GHz Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V Current - Collector (Ic) (Max): 150mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	In Stock5,667 More on Order