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2SA1930,LBS2DIAQ(J


Part Number 2SA1930,LBS2DIAQ(J
Zouser Part # 2SA1930-LBS2DIAQ-J
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsBipolar (BJT) - Single
Description TRANS PNP 2A 180V TO220-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models 2SA1930,LBS2DIAQ(J PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Jun 5 - Jun 10 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock538 - More on Order
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Lead-TimeTo be Confirmed
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2SA1930,LBS2DIAQ(J Specifications

Part Number 2SA1930,LBS2DIAQ(J
Brand Toshiba Semiconductor and Storage
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single
Manufacturer Toshiba Semiconductor and Storage
Series -
Transistor Type PNP
Current - Collector (Ic) (Max) 2A
Voltage - Collector Emitter Breakdown (Max) 180V
Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A
Current - Collector Cutoff (Max) 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V
Power - Max 2W
Frequency - Transition 200MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220NIS

2SA1930,LBS2DIAQ(J Documents

2SA1930, 2SA1930 Datasheet (Total Pages: 5, Size: 138.32 KB)
2SA1930 Datasheet Cover2SA1930 Datasheet Page 22SA1930 Datasheet Page 32SA1930 Datasheet Page 42SA1930 Datasheet Page 5

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