Datasheet | 1N3891R |
File Size | 751.56 KB |
Total Pages | 3 |
Manufacturer | GeneSiC Semiconductor |
Website | |
Total Parts | This datasheet covers 10 part numbers |
Associated Parts | 1N3891R, 1N3890R, 1N3893, 1N3890, 1N3889, 1N3893R, 1N3891, 1N3892R, 1N3889R, 1N3892 |
Description | DIODE GEN PURP REV 200V 12A DO4, DIODE GEN PURP REV 100V 12A DO4, DIODE GEN PURP 600V 12A DO4, DIODE GEN PURP 100V 12A DO4, DIODE GEN PURP 50V 12A DO4 |
1N3891R - GeneSiC Semiconductor
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1N3890R | GeneSiC Semiconductor | DIODE GEN PURP REV 100V 12A DO4 | 416 More on Order |
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1N3893 | GeneSiC Semiconductor | DIODE GEN PURP 600V 12A DO4 | 362 More on Order |
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1N3891 | GeneSiC Semiconductor | DIODE GEN PURP 200V 12A DO4 | 464 More on Order |
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1N3892R | GeneSiC Semiconductor | DIODE GEN PURP REV 400V 12A DO4 | 1742 More on Order |
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GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 12A Voltage - Forward (Vf) (Max) @ If 1.4V @ 12A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 200ns Current - Reverse Leakage @ Vr 25µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -65°C ~ 150°C |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 12A Voltage - Forward (Vf) (Max) @ If 1.4V @ 12A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 200ns Current - Reverse Leakage @ Vr 25µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -65°C ~ 150°C |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 12A Voltage - Forward (Vf) (Max) @ If 1.4V @ 12A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 200ns Current - Reverse Leakage @ Vr 25µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -65°C ~ 150°C |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 12A Voltage - Forward (Vf) (Max) @ If 1.4V @ 12A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 200ns Current - Reverse Leakage @ Vr 25µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -65°C ~ 150°C |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 50V Current - Average Rectified (Io) 12A Voltage - Forward (Vf) (Max) @ If 1.4V @ 12A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 200ns Current - Reverse Leakage @ Vr 25µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -65°C ~ 150°C |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 12A Voltage - Forward (Vf) (Max) @ If 1.4V @ 12A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 200ns Current - Reverse Leakage @ Vr 25µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -65°C ~ 150°C |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 12A Voltage - Forward (Vf) (Max) @ If 1.4V @ 12A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 200ns Current - Reverse Leakage @ Vr 25µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -65°C ~ 150°C |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 12A Voltage - Forward (Vf) (Max) @ If 1.4V @ 12A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 200ns Current - Reverse Leakage @ Vr 25µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -65°C ~ 150°C |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 50V Current - Average Rectified (Io) 12A Voltage - Forward (Vf) (Max) @ If 1.4V @ 12A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 200ns Current - Reverse Leakage @ Vr 25µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -65°C ~ 150°C |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 12A Voltage - Forward (Vf) (Max) @ If 1.4V @ 12A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 200ns Current - Reverse Leakage @ Vr 25µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -65°C ~ 150°C |