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| Datasheet | 1N4150TR |
| File Size | 76.72 KB |
| Total Pages | 3 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | 1N4150TR, 1N4150TAP |
| Description | DIODE GEN PURP 50V 300MA DO35, DIODE GEN PURP 50V 150MA DO35 |
1N4150TR - Vishay Semiconductor Diodes Division
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Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 50V Current - Average Rectified (Io) 300mA (DC) Voltage - Forward (Vf) (Max) @ If 1V @ 200mA Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 4ns Current - Reverse Leakage @ Vr 100nA @ 50V Capacitance @ Vr, F 2.5pF @ 0V, 1MHz Mounting Type Through Hole Package / Case DO-204AH, DO-35, Axial Supplier Device Package DO-35 Operating Temperature - Junction 175°C (Max) |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 50V Current - Average Rectified (Io) 150mA Voltage - Forward (Vf) (Max) @ If 1V @ 200mA Speed Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr) 4ns Current - Reverse Leakage @ Vr 100nA @ 50V Capacitance @ Vr, F 2.5pF @ 0V, 1MHz Mounting Type Through Hole Package / Case DO-204AH, DO-35, Axial Supplier Device Package DO-35 Operating Temperature - Junction -65°C ~ 175°C |