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1N5061TAP Datasheet

1N5061TAP Cover
Datasheet1N5061TAP
File Size135.63 KB
Total Pages4
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 8 part numbers
Associated Parts 1N5061TAP, 1N5060TAP, 1N5059TAP, 1N5059TR, 1N5062TAP, 1N5062TR, 1N5061TR, 1N5060TR
Description DIODE AVALANCHE 600V 2A SOD57, DIODE AVALANCHE 400V 2A SOD57, DIODE AVALANCHE 200V 2A SOD57, DIODE AVALANCHE 200V 2A SOD57, DIODE AVALANCHE 800V 2A SOD57

1N5061TAP - Vishay Semiconductor Diodes Division

1N5061TAP Datasheet Page 1
1N5061TAP Datasheet Page 2
1N5061TAP Datasheet Page 3
1N5061TAP Datasheet Page 4

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1N5061TAP

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Avalanche

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

2A

Voltage - Forward (Vf) (Max) @ If

1.15V @ 2.5A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

4µs

Current - Reverse Leakage @ Vr

1µA @ 600V

Capacitance @ Vr, F

40pF @ 0V, 1MHz

Mounting Type

Through Hole

Package / Case

SOD-57, Axial

Supplier Device Package

SOD-57

Operating Temperature - Junction

-55°C ~ 175°C

1N5060TAP

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Avalanche

Voltage - DC Reverse (Vr) (Max)

400V

Current - Average Rectified (Io)

2A

Voltage - Forward (Vf) (Max) @ If

1.15V @ 2.5A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

4µs

Current - Reverse Leakage @ Vr

1µA @ 400V

Capacitance @ Vr, F

40pF @ 0V, 1MHz

Mounting Type

Through Hole

Package / Case

SOD-57, Axial

Supplier Device Package

SOD-57

Operating Temperature - Junction

-55°C ~ 175°C

1N5059TAP

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Avalanche

Voltage - DC Reverse (Vr) (Max)

200V

Current - Average Rectified (Io)

2A

Voltage - Forward (Vf) (Max) @ If

1.15V @ 2.5A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

4µs

Current - Reverse Leakage @ Vr

1µA @ 200V

Capacitance @ Vr, F

40pF @ 0V, 1MHz

Mounting Type

Through Hole

Package / Case

SOD-57, Axial

Supplier Device Package

SOD-57

Operating Temperature - Junction

-55°C ~ 175°C

1N5059TR

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Avalanche

Voltage - DC Reverse (Vr) (Max)

200V

Current - Average Rectified (Io)

2A

Voltage - Forward (Vf) (Max) @ If

1.15V @ 2.5A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

4µs

Current - Reverse Leakage @ Vr

1µA @ 200V

Capacitance @ Vr, F

40pF @ 0V, 1MHz

Mounting Type

Through Hole

Package / Case

SOD-57, Axial

Supplier Device Package

SOD-57

Operating Temperature - Junction

-55°C ~ 175°C

1N5062TAP

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Avalanche

Voltage - DC Reverse (Vr) (Max)

800V

Current - Average Rectified (Io)

2A

Voltage - Forward (Vf) (Max) @ If

1.15V @ 2.5A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

4µs

Current - Reverse Leakage @ Vr

1µA @ 800V

Capacitance @ Vr, F

40pF @ 0V, 1MHz

Mounting Type

Through Hole

Package / Case

SOD-57, Axial

Supplier Device Package

SOD-57

Operating Temperature - Junction

-55°C ~ 175°C

1N5062TR

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Avalanche

Voltage - DC Reverse (Vr) (Max)

800V

Current - Average Rectified (Io)

2A

Voltage - Forward (Vf) (Max) @ If

1.15V @ 2.5A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

4µs

Current - Reverse Leakage @ Vr

1µA @ 800V

Capacitance @ Vr, F

40pF @ 0V, 1MHz

Mounting Type

Through Hole

Package / Case

SOD-57, Axial

Supplier Device Package

SOD-57

Operating Temperature - Junction

-55°C ~ 175°C

1N5061TR

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Avalanche

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

2A

Voltage - Forward (Vf) (Max) @ If

1.15V @ 2.5A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

4µs

Current - Reverse Leakage @ Vr

1µA @ 600V

Capacitance @ Vr, F

40pF @ 0V, 1MHz

Mounting Type

Through Hole

Package / Case

SOD-57, Axial

Supplier Device Package

SOD-57

Operating Temperature - Junction

-55°C ~ 175°C

1N5060TR

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Avalanche

Voltage - DC Reverse (Vr) (Max)

400V

Current - Average Rectified (Io)

2A

Voltage - Forward (Vf) (Max) @ If

1.15V @ 2.5A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

4µs

Current - Reverse Leakage @ Vr

1µA @ 400V

Capacitance @ Vr, F

40pF @ 0V, 1MHz

Mounting Type

Through Hole

Package / Case

SOD-57, Axial

Supplier Device Package

SOD-57

Operating Temperature - Junction

-55°C ~ 175°C