Datasheet | 1N5831R |
File Size | 766.63 KB |
Total Pages | 3 |
Manufacturer | GeneSiC Semiconductor |
Website | |
Total Parts | This datasheet covers 6 part numbers |
Associated Parts | 1N5831R, 1N5830R, 1N5829R, 1N5831, 1N5830, 1N5829 |
Description | DIODE SCHOTTKY REV 35V DO4, DIODE SCHOTTKY REV 25V DO4, DIODE SCHOTTKY REV 20V DO4, DIODE SCHOTTKY 35V 25A DO4, DIODE SCHOTTKY 25V 25A DO4 |
1N5831R - GeneSiC Semiconductor
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1N5831 | GeneSiC Semiconductor | DIODE SCHOTTKY 35V 25A DO4 | 578 More on Order |
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1N5829 | GeneSiC Semiconductor | DIODE SCHOTTKY 20V 25A DO4 | 258 More on Order |
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GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 35V Current - Average Rectified (Io) 25A Voltage - Forward (Vf) (Max) @ If 580mV @ 25A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 2mA @ 20V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -55°C ~ 150°C |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 25V Current - Average Rectified (Io) 25A Voltage - Forward (Vf) (Max) @ If 580mV @ 25A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 2mA @ 20V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -55°C ~ 150°C |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 20V Current - Average Rectified (Io) 25A Voltage - Forward (Vf) (Max) @ If 580mV @ 25A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 2mA @ 20V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -55°C ~ 150°C |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 35V Current - Average Rectified (Io) 25A Voltage - Forward (Vf) (Max) @ If 580mV @ 25A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 2mA @ 20V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -55°C ~ 150°C |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 25V Current - Average Rectified (Io) 25A Voltage - Forward (Vf) (Max) @ If 580mV @ 25A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 2mA @ 20V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -55°C ~ 150°C |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 20V Current - Average Rectified (Io) 25A Voltage - Forward (Vf) (Max) @ If 580mV @ 25A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 2mA @ 20V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -55°C ~ 150°C |