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1N5831R Datasheet

1N5831R Cover
Datasheet1N5831R
File Size766.63 KB
Total Pages3
ManufacturerGeneSiC Semiconductor
Website
Total PartsThis datasheet covers 6 part numbers
Associated Parts 1N5831R, 1N5830R, 1N5829R, 1N5831, 1N5830, 1N5829
Description DIODE SCHOTTKY REV 35V DO4, DIODE SCHOTTKY REV 25V DO4, DIODE SCHOTTKY REV 20V DO4, DIODE SCHOTTKY 35V 25A DO4, DIODE SCHOTTKY 25V 25A DO4

1N5831R - GeneSiC Semiconductor

1N5831R Datasheet Page 1
1N5831R Datasheet Page 2
1N5831R Datasheet Page 3

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1N5830R 1N5830R GeneSiC Semiconductor DIODE SCHOTTKY REV 25V DO4 257

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1N5829R 1N5829R GeneSiC Semiconductor DIODE SCHOTTKY REV 20V DO4 199

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1N5831 1N5831 GeneSiC Semiconductor DIODE SCHOTTKY 35V 25A DO4 578

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1N5830 1N5830 GeneSiC Semiconductor DIODE SCHOTTKY 25V 25A DO4 357

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1N5829 1N5829 GeneSiC Semiconductor DIODE SCHOTTKY 20V 25A DO4 258

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URL Link

1N5831R

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Type

Schottky, Reverse Polarity

Voltage - DC Reverse (Vr) (Max)

35V

Current - Average Rectified (Io)

25A

Voltage - Forward (Vf) (Max) @ If

580mV @ 25A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

2mA @ 20V

Capacitance @ Vr, F

-

Mounting Type

Chassis, Stud Mount

Package / Case

DO-203AA, DO-4, Stud

Supplier Device Package

DO-4

Operating Temperature - Junction

-55°C ~ 150°C

1N5830R

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Type

Schottky, Reverse Polarity

Voltage - DC Reverse (Vr) (Max)

25V

Current - Average Rectified (Io)

25A

Voltage - Forward (Vf) (Max) @ If

580mV @ 25A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

2mA @ 20V

Capacitance @ Vr, F

-

Mounting Type

Chassis, Stud Mount

Package / Case

DO-203AA, DO-4, Stud

Supplier Device Package

DO-4

Operating Temperature - Junction

-55°C ~ 150°C

1N5829R

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Type

Schottky, Reverse Polarity

Voltage - DC Reverse (Vr) (Max)

20V

Current - Average Rectified (Io)

25A

Voltage - Forward (Vf) (Max) @ If

580mV @ 25A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

2mA @ 20V

Capacitance @ Vr, F

-

Mounting Type

Chassis, Stud Mount

Package / Case

DO-203AA, DO-4, Stud

Supplier Device Package

DO-4

Operating Temperature - Junction

-55°C ~ 150°C

1N5831

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

35V

Current - Average Rectified (Io)

25A

Voltage - Forward (Vf) (Max) @ If

580mV @ 25A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

2mA @ 20V

Capacitance @ Vr, F

-

Mounting Type

Chassis, Stud Mount

Package / Case

DO-203AA, DO-4, Stud

Supplier Device Package

DO-4

Operating Temperature - Junction

-55°C ~ 150°C

1N5830

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

25V

Current - Average Rectified (Io)

25A

Voltage - Forward (Vf) (Max) @ If

580mV @ 25A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

2mA @ 20V

Capacitance @ Vr, F

-

Mounting Type

Chassis, Stud Mount

Package / Case

DO-203AA, DO-4, Stud

Supplier Device Package

DO-4

Operating Temperature - Junction

-55°C ~ 150°C

1N5829

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

20V

Current - Average Rectified (Io)

25A

Voltage - Forward (Vf) (Max) @ If

580mV @ 25A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

2mA @ 20V

Capacitance @ Vr, F

-

Mounting Type

Chassis, Stud Mount

Package / Case

DO-203AA, DO-4, Stud

Supplier Device Package

DO-4

Operating Temperature - Junction

-55°C ~ 150°C