Semiconductors
Passive Components
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Optoelectronics
| Datasheet | 1N6639US |
| File Size | 75.52 KB |
| Total Pages | 2 |
| Manufacturer | Microsemi |
| Website | https://www.microsemi.com/ |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | 1N6639US, 1N6641US, 1N6640US |
| Description | DIODE GEN PURPOSE, DIODE GEN PURPOSE, DIODE GEN PURP 75V 300MA D5D |
1N6639US - Microsemi
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Manufacturer Microsemi Corporation Series * Diode Type - Voltage - DC Reverse (Vr) (Max) - Current - Average Rectified (Io) - Voltage - Forward (Vf) (Max) @ If - Speed - Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr - Capacitance @ Vr, F - Mounting Type - Package / Case - Supplier Device Package - Operating Temperature - Junction - |
Manufacturer Microsemi Corporation Series * Diode Type - Voltage - DC Reverse (Vr) (Max) - Current - Average Rectified (Io) - Voltage - Forward (Vf) (Max) @ If - Speed - Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr - Capacitance @ Vr, F - Mounting Type - Package / Case - Supplier Device Package - Operating Temperature - Junction - |
Manufacturer Microsemi Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 75V Current - Average Rectified (Io) 300mA (DC) Voltage - Forward (Vf) (Max) @ If 1V @ 200mA Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 4ns Current - Reverse Leakage @ Vr 100nA @ 50V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case SQ-MELF, D Supplier Device Package D-5D Operating Temperature - Junction -65°C ~ 175°C |