Datasheet | 1PS193,135 |
File Size | 392 KB |
Total Pages | 9 |
Manufacturer | NXP |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | 1PS193,135, 1PS193,115 |
Description | DIODE GEN PURP 80V 215MA SMT3, DIODE GEN PURP 80V 215MA SMT3 |
1PS193,135 - NXP
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1PS193,135 | NXP | DIODE GEN PURP 80V 215MA SMT3 | 640 More on Order |
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NXP Manufacturer NXP USA Inc. Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 80V Current - Average Rectified (Io) 215mA (DC) Voltage - Forward (Vf) (Max) @ If 1.2V @ 100mA Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 4ns Current - Reverse Leakage @ Vr 500nA @ 80V Capacitance @ Vr, F 1.5pF @ 0V, 1MHz Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SMT3; MPAK Operating Temperature - Junction 150°C (Max) |
NXP Manufacturer NXP USA Inc. Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 80V Current - Average Rectified (Io) 215mA (DC) Voltage - Forward (Vf) (Max) @ If 1.2V @ 100mA Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 4ns Current - Reverse Leakage @ Vr 500nA @ 80V Capacitance @ Vr, F 1.5pF @ 0V, 1MHz Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SMT3; MPAK Operating Temperature - Junction 150°C (Max) |