Semiconductors
Passive Components
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Optoelectronics
| Datasheet | 2N5639 |
| File Size | 51.45 KB |
| Total Pages | 3 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 5 part numbers |
| Associated Parts | 2N5639, 2N5639RLRAG, 2N5639G, 2N5638RLRAG, 2N5638RLRA |
| Description | JFET N-CH 35V 0.31W TO92, JFET N-CH 35V 0.31W TO92, JFET N-CH 35V 0.31W TO92, JFET N-CH 35V 0.31W TO92, JFET N-CH 35V 0.31W TO92 |
2N5639 - ON Semiconductor
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URL Link
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Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 35V Drain to Source Voltage (Vdss) 30V Current - Drain (Idss) @ Vds (Vgs=0) 25mA @ 20V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id - Input Capacitance (Ciss) (Max) @ Vds 10pF @ 12V (VGS) Resistance - RDS(On) 60 Ohms Power - Max 310mW Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 35V Drain to Source Voltage (Vdss) 30V Current - Drain (Idss) @ Vds (Vgs=0) 25mA @ 20V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id - Input Capacitance (Ciss) (Max) @ Vds 10pF @ 12V (VGS) Resistance - RDS(On) 60 Ohms Power - Max 310mW Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 35V Drain to Source Voltage (Vdss) 30V Current - Drain (Idss) @ Vds (Vgs=0) 25mA @ 20V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id - Input Capacitance (Ciss) (Max) @ Vds 10pF @ 12V (VGS) Resistance - RDS(On) 60 Ohms Power - Max 310mW Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 35V Drain to Source Voltage (Vdss) 30V Current - Drain (Idss) @ Vds (Vgs=0) 50mA @ 20V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id - Input Capacitance (Ciss) (Max) @ Vds 10pF @ 12V (VGS) Resistance - RDS(On) 30 Ohms Power - Max 310mW Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 35V Drain to Source Voltage (Vdss) 30V Current - Drain (Idss) @ Vds (Vgs=0) 50mA @ 20V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id - Input Capacitance (Ciss) (Max) @ Vds 10pF @ 12V (VGS) Resistance - RDS(On) 30 Ohms Power - Max 310mW Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |