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| Datasheet | 2N7002ET1G |
| File Size | 199.65 KB |
| Total Pages | 6 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | 2N7002ET1G |
| Description | MOSFET N-CH 60V 260MA SOT-23 |
2N7002ET1G - ON Semiconductor
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2N7002ET1G | ON Semiconductor | MOSFET N-CH 60V 260MA SOT-23 | 391738 More on Order |
URL Link
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 260mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.5Ohm @ 240mA, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.81nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 26.7pF @ 25V FET Feature - Power Dissipation (Max) 300mW (Tj) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3 |