Semiconductors
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Optoelectronics
| Datasheet | 2N7002H-13 |
| File Size | 438.87 KB |
| Total Pages | 6 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | 2N7002H-13, 2N7002H-7 |
| Description | MOSFET N-CH 60V 0.17A SOT23, MOSFET N-CH 60V 0.17A SOT23-3 |
2N7002H-13 - Diodes Incorporated
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Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 7.5Ohm @ 50mA, 5V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.35nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 26pF @ 25V FET Feature - Power Dissipation (Max) 370mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 7.5Ohm @ 50mA, 5V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.35nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 26pF @ 25V FET Feature - Power Dissipation (Max) 370mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3 |