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| Datasheet | 2SA1382,T6MIBF(J |
| File Size | 189.25 KB |
| Total Pages | 5 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Website | http://www.toshiba.com/taec/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | 2SA1382,T6MIBF(J |
| Description | TRANS PNP 2A 50V TO226-3 |
2SA1382,T6MIBF(J - Toshiba Semiconductor and Storage
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URL Link
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Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 500mV @ 33mA, 1A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 500mA, 2V Power - Max 900mW Frequency - Transition 110MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92MOD |