Top

2SA1955FVBTPL3Z Datasheet

2SA1955FVBTPL3Z Cover
Datasheet2SA1955FVBTPL3Z
File Size237.15 KB
Total Pages5
ManufacturerToshiba Semiconductor and Storage
Websitehttp://www.toshiba.com/taec/
Total PartsThis datasheet covers 2 part numbers
Associated Parts 2SA1955FVBTPL3Z, 2SA1955FVATPL3Z
Description TRANS PNP 12V 0.4A VESM, TRANS PNP 12V 0.4A VESM

2SA1955FVBTPL3Z - Toshiba Semiconductor and Storage

2SA1955FVBTPL3Z Datasheet Page 1
2SA1955FVBTPL3Z Datasheet Page 2
2SA1955FVBTPL3Z Datasheet Page 3
2SA1955FVBTPL3Z Datasheet Page 4
2SA1955FVBTPL3Z Datasheet Page 5

The Products You May Be Interested In

2SA1955FVBTPL3Z 2SA1955FVBTPL3Z Toshiba Semiconductor and Storage TRANS PNP 12V 0.4A VESM 15334

More on Order

2SA1955FVATPL3Z 2SA1955FVATPL3Z Toshiba Semiconductor and Storage TRANS PNP 12V 0.4A VESM 15097

More on Order

URL Link

2SA1955FVBTPL3Z

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

400mA

Voltage - Collector Emitter Breakdown (Max)

12V

Vce Saturation (Max) @ Ib, Ic

250mV @ 10mA, 200mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

300 @ 10mA, 2V

Power - Max

100mW

Frequency - Transition

130MHz

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-723

Supplier Device Package

VESM

2SA1955FVATPL3Z

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

400mA

Voltage - Collector Emitter Breakdown (Max)

12V

Vce Saturation (Max) @ Ib, Ic

250mV @ 10mA, 200mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

300 @ 10mA, 2V

Power - Max

100mW

Frequency - Transition

130MHz

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SC-101, SOT-883

Supplier Device Package

CST3