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| Datasheet | 2SB1481(TOJS,Q,M) |
| File Size | 157.13 KB |
| Total Pages | 4 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Website | http://www.toshiba.com/taec/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | 2SB1481(TOJS,Q,M) |
| Description | TRANS PNP 4A 100V TO220-3 |
2SB1481(TOJS,Q,M) - Toshiba Semiconductor and Storage
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2SB1481(TOJS,Q,M) | Toshiba Semiconductor and Storage | TRANS PNP 4A 100V TO220-3 | 459 More on Order |
URL Link
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Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 4A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 1.5V @ 6mA, 3A Current - Collector Cutoff (Max) 2µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 3A, 2V Power - Max 2W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220NIS |