Datasheet | 2SC3665-Y,T2YNSF(J |
File Size | 134.49 KB |
Total Pages | 4 |
Manufacturer | Toshiba Semiconductor and Storage |
Website | http://www.toshiba.com/taec/ |
Total Parts | This datasheet covers 4 part numbers |
Associated Parts | 2SC3665-Y,T2YNSF(J, 2SC3665-Y,T2NSF(J, 2SC3665-Y,T2F(J, 2SC3665-Y(T2NSW,FM |
Description | TRANS NPN 800MA 120V SC71, TRANS NPN 800MA 120V SC71, TRANS NPN 800MA 120V SC71, TRANS NPN 800MA 120V SC71 |
2SC3665-Y,T2YNSF(J - Toshiba Semiconductor and Storage
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URL Link
Toshiba Semiconductor and Storage Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Current - Collector (Ic) (Max) 800mA Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 100mA, 5V Power - Max 1W Frequency - Transition 120MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case SC-71 Supplier Device Package MSTM |
Toshiba Semiconductor and Storage Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Current - Collector (Ic) (Max) 800mA Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 100mA, 5V Power - Max 1W Frequency - Transition 120MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case SC-71 Supplier Device Package MSTM |
Toshiba Semiconductor and Storage Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Current - Collector (Ic) (Max) 800mA Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 100mA, 5V Power - Max 1W Frequency - Transition 120MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case SC-71 Supplier Device Package MSTM |
Toshiba Semiconductor and Storage Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Current - Collector (Ic) (Max) 800mA Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 100mA, 5V Power - Max 1W Frequency - Transition 120MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case SC-71 Supplier Device Package MSTM |