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2SC3665-Y Datasheet

2SC3665-Y,T2YNSF(J Cover
Datasheet2SC3665-Y,T2YNSF(J
File Size134.49 KB
Total Pages4
ManufacturerToshiba Semiconductor and Storage
Websitehttp://www.toshiba.com/taec/
Total PartsThis datasheet covers 4 part numbers
Associated Parts 2SC3665-Y,T2YNSF(J, 2SC3665-Y,T2NSF(J, 2SC3665-Y,T2F(J, 2SC3665-Y(T2NSW,FM
Description TRANS NPN 800MA 120V SC71, TRANS NPN 800MA 120V SC71, TRANS NPN 800MA 120V SC71, TRANS NPN 800MA 120V SC71

2SC3665-Y,T2YNSF(J - Toshiba Semiconductor and Storage

2SC3665-Y Datasheet Page 1
2SC3665-Y Datasheet Page 2
2SC3665-Y Datasheet Page 3
2SC3665-Y Datasheet Page 4

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URL Link

2SC3665-Y,T2YNSF(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

120V

Vce Saturation (Max) @ Ib, Ic

1V @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 100mA, 5V

Power - Max

1W

Frequency - Transition

120MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

SC-71

Supplier Device Package

MSTM

2SC3665-Y,T2NSF(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

120V

Vce Saturation (Max) @ Ib, Ic

1V @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 100mA, 5V

Power - Max

1W

Frequency - Transition

120MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

SC-71

Supplier Device Package

MSTM

2SC3665-Y,T2F(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

120V

Vce Saturation (Max) @ Ib, Ic

1V @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 100mA, 5V

Power - Max

1W

Frequency - Transition

120MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

SC-71

Supplier Device Package

MSTM

2SC3665-Y(T2NSW,FM

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

120V

Vce Saturation (Max) @ Ib, Ic

1V @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 100mA, 5V

Power - Max

1W

Frequency - Transition

120MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

SC-71

Supplier Device Package

MSTM