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2SC4793 Datasheet

2SC4793,YHF(M Cover
Datasheet2SC4793,YHF(M
File Size125.4 KB
Total Pages4
ManufacturerToshiba Semiconductor and Storage
Websitehttp://www.toshiba.com/taec/
Total PartsThis datasheet covers 11 part numbers
Associated Parts 2SC4793,YHF(M, 2SC4793,YHF(J, 2SC4793,WNLF(J, 2SC4793,TOA1F(J, 2SC4793,NSEIKIF(J, 2SC4793,HFEF(M, 2SC4793,HFEF(J, 2SC4793,F(J, 2SC4793(PAIO,F,M), 2SC4793(LBSAN,F,M), 2SC4793(F,M)
Description TRANS NPN 1A 230V TO220-3, TRANS NPN 1A 230V TO220-3, TRANS NPN 1A 230V TO220-3, TRANS NPN 1A 230V TO220-3, TRANS NPN 1A 230V TO220-3

2SC4793,YHF(M - Toshiba Semiconductor and Storage

2SC4793 Datasheet Page 1
2SC4793 Datasheet Page 2
2SC4793 Datasheet Page 3
2SC4793 Datasheet Page 4

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URL Link

2SC4793,YHF(M

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

230V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 50mA, 500mA

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA, 5V

Power - Max

2W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

2SC4793,YHF(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

230V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 50mA, 500mA

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA, 5V

Power - Max

2W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

2SC4793,WNLF(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

230V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 50mA, 500mA

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA, 5V

Power - Max

2W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

2SC4793,TOA1F(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

230V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 50mA, 500mA

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA, 5V

Power - Max

2W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

2SC4793,NSEIKIF(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

230V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 50mA, 500mA

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA, 5V

Power - Max

2W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

2SC4793,HFEF(M

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

230V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 50mA, 500mA

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA, 5V

Power - Max

2W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

2SC4793,HFEF(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

230V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 50mA, 500mA

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA, 5V

Power - Max

2W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

2SC4793,F(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

230V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 50mA, 500mA

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA, 5V

Power - Max

2W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

2SC4793(PAIO,F,M)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

230V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 50mA, 500mA

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA, 5V

Power - Max

2W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

2SC4793(LBSAN,F,M)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

230V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 50mA, 500mA

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA, 5V

Power - Max

2W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

2SC4793(F,M)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

230V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 50mA, 500mA

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA, 5V

Power - Max

2W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS