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2SD1060S-1EX Datasheet

2SD1060S-1EX Cover
Datasheet2SD1060S-1EX
File Size192.79 KB
Total Pages4
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 4 part numbers
Associated Parts 2SD1060S-1EX, 2SD1060R-1EX, 2SD1060R-1E, 2SD1060S-1E
Description TRANS NPN 50V 5A, TRANS NPN 50V 5A, TRANS NPN 50V 5A, TRANS NPN 50V 5A

2SD1060S-1EX - ON Semiconductor

2SD1060S-1EX Datasheet Page 1
2SD1060S-1EX Datasheet Page 2
2SD1060S-1EX Datasheet Page 3
2SD1060S-1EX Datasheet Page 4

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URL Link

2SD1060S-1EX

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

5A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

300mV @ 300mA, 3A

Current - Collector Cutoff (Max)

100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

140 @ 1A, 2V

Power - Max

1.75W

Frequency - Transition

30MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3

2SD1060R-1EX

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

5A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

300mV @ 300mA, 3A

Current - Collector Cutoff (Max)

100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1A, 2V

Power - Max

1.75W

Frequency - Transition

30MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3

2SD1060R-1E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

5A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

300mV @ 300mA, 3A

Current - Collector Cutoff (Max)

100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1A, 2V

Power - Max

1.75W

Frequency - Transition

30MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3

2SD1060S-1E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

5A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

300mV @ 300mA, 3A

Current - Collector Cutoff (Max)

100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

140 @ 1A, 2V

Power - Max

1.75W

Frequency - Transition

30MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3