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2SJ649-AZ Datasheet

2SJ649-AZ Cover
Datasheet2SJ649-AZ
File Size204.93 KB
Total Pages10
ManufacturerRenesas Electronics America
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts 2SJ649-AZ
Description MOSFET P-CH 60V 20A TO-220

2SJ649-AZ - Renesas Electronics America

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URL Link

2SJ649-AZ

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

48mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1900pF @ 10V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 25W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220 Isolated Tab

Package / Case

TO-220-3 Isolated Tab