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2SJ690-T1B-AT Datasheet

2SJ690-T1B-AT Cover
Datasheet2SJ690-T1B-AT
File Size254 KB
Total Pages8
ManufacturerRenesas Electronics America
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts 2SJ690-T1B-AT
Description MOSFET P-CH 30V TSMT

2SJ690-T1B-AT - Renesas Electronics America

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URL Link

2SJ690-T1B-AT

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

119mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

5.2nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

450pF @ 10V

FET Feature

-

Power Dissipation (Max)

200mW (Ta)

Operating Temperature

150°C

Mounting Type

Surface Mount

Supplier Device Package

SC-96-3, Thin Mini Mold

Package / Case

SC-96