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2SK2315TYTR-E Datasheet

2SK2315TYTR-E Cover
Datasheet2SK2315TYTR-E
File Size79.76 KB
Total Pages8
ManufacturerRenesas Electronics America
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts 2SK2315TYTR-E
Description MOSFET N-CH 60V 2A 4-UPAK

2SK2315TYTR-E - Renesas Electronics America

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URL Link

2SK2315TYTR-E

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

3V, 4V

Rds On (Max) @ Id, Vgs

450mOhm @ 1A, 4V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

173pF @ 10V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

UPAK

Package / Case

TO-243AA