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| Datasheet | 2SK3430-Z-E1-AZ |
| File Size | 217.47 KB |
| Total Pages | 10 |
| Manufacturer | Renesas Electronics America |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | 2SK3430-Z-E1-AZ, 2SK3430-AZ |
| Description | MOSFET N-CH 40V 80A TO220AB, MOSFET N-CH 40V 80A TO220AB |
2SK3430-Z-E1-AZ - Renesas Electronics America
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 7.3mOhm @ 40A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 10V FET Feature - Power Dissipation (Max) 1.5W (Ta), 84W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 7.3mOhm @ 40A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 10V FET Feature - Power Dissipation (Max) 1.5W (Ta), 84W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |