![2SK3666-2-TB-E Cover](http://media.zouser.com/zouser/datasheet/sm/2sk3666-2-tb-e-0001.jpg)
Datasheet | 2SK3666-2-TB-E |
File Size | 1,007.98 KB |
Total Pages | 4 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | 2SK3666-2-TB-E, 2SK3666-3-TB-E |
Description | JFET NCH 30V 200MW 3CP, JFET N-CH 10MA 200MW 3CP |
2SK3666-2-TB-E - ON Semiconductor
![2SK3666-2-TB-E Datasheet Page 1](http://media.zouser.com/zouser/datasheet/sm/2sk3666-2-tb-e-0001.jpg)
![2SK3666-2-TB-E Datasheet Page 2](http://media.zouser.com/zouser/datasheet/sm/2sk3666-2-tb-e-0002.jpg)
![2SK3666-2-TB-E Datasheet Page 3](http://media.zouser.com/zouser/datasheet/sm/2sk3666-2-tb-e-0003.jpg)
![2SK3666-2-TB-E Datasheet Page 4](http://media.zouser.com/zouser/datasheet/sm/2sk3666-2-tb-e-0004.jpg)
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2SK3666-3-TB-E | ON Semiconductor | JFET N-CH 10MA 200MW 3CP | 435 More on Order |
URL Link
Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) - Drain to Source Voltage (Vdss) 30V Current - Drain (Idss) @ Vds (Vgs=0) 600µA @ 10V Current Drain (Id) - Max 10mA Voltage - Cutoff (VGS off) @ Id 180mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds 4pF @ 10V Resistance - RDS(On) 200 Ohms Power - Max 200mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package 3-CP |
Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) - Drain to Source Voltage (Vdss) 30V Current - Drain (Idss) @ Vds (Vgs=0) 1.2mA @ 10V Current Drain (Id) - Max 10mA Voltage - Cutoff (VGS off) @ Id 180mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds 4pF @ 10V Resistance - RDS(On) 200 Ohms Power - Max 200mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package 3-CP |