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2SK3821-E Datasheet

2SK3821-E Cover
Datasheet2SK3821-E
File Size98.22 KB
Total Pages4
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts 2SK3821-E, 2SK3821-DL-E
Description MOSFET N-CH 100V 40A SMP, MOSFET N-CH 100V 40A SMP-FD

2SK3821-E - ON Semiconductor

2SK3821-E Datasheet Page 1
2SK3821-E Datasheet Page 2
2SK3821-E Datasheet Page 3
2SK3821-E Datasheet Page 4

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URL Link

2SK3821-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

40A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

33mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

73nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4200pF @ 20V

FET Feature

-

Power Dissipation (Max)

1.65W (Ta), 65W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

SMP

Package / Case

TO-220-3, Short Tab

2SK3821-DL-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

40A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

33mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

73nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4200pF @ 20V

FET Feature

-

Power Dissipation (Max)

1.65W (Ta), 65W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SMP-FD

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63