Datasheet | 2SK4065-DL-1EX |
File Size | 295.72 KB |
Total Pages | 7 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | 2SK4065-DL-1EX, 2SK4065-DL-1E |
Description | MOSFET N-CH 75V TO263-2, MOSFET N-CH 75V 100A |
2SK4065-DL-1EX - ON Semiconductor
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2SK4065-DL-1E | ON Semiconductor | MOSFET N-CH 75V 100A | 537 More on Order |
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ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 100A (Ta) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 6mOhm @ 50A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 12200pF @ 20V FET Feature - Power Dissipation (Max) 1.65W (Ta), 90W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263-2 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 100A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 6mOhm @ 50A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 12200pF @ 20V FET Feature - Power Dissipation (Max) 1.65W (Ta), 90W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263-2 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |