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2SK536-TB-E Datasheet

2SK536-TB-E Cover
Datasheet2SK536-TB-E
File Size184.5 KB
Total Pages4
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts 2SK536-TB-E
Description MOSFET N-CH 50V 0.1A

2SK536-TB-E - ON Semiconductor

2SK536-TB-E Datasheet Page 1
2SK536-TB-E Datasheet Page 2
2SK536-TB-E Datasheet Page 3
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URL Link

2SK536-TB-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

100mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

20Ohm @ 10mA, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

15pF @ 10V

FET Feature

-

Power Dissipation (Max)

200mW (Ta)

Operating Temperature

125°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-59

Package / Case

TO-236-3, SC-59, SOT-23-3