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3LN01M-TL-H Datasheet

3LN01M-TL-H Cover
Datasheet3LN01M-TL-H
File Size149.03 KB
Total Pages1
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts 3LN01M-TL-H, 3LN01M-TL-E
Description MOSFET N-CH 30V 150MA MCP, MOSFET N-CH 30V 0.15A

3LN01M-TL-H - ON Semiconductor

3LN01M-TL-H Datasheet Page 1

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URL Link

3LN01M-TL-H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

150mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4V

Rds On (Max) @ Id, Vgs

3.7Ohm @ 80mA, 4V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

1.58nC @ 10V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

7pF @ 10V

FET Feature

-

Power Dissipation (Max)

150mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70/MCPH3

Package / Case

SC-70, SOT-323

3LN01M-TL-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

150mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4V

Rds On (Max) @ Id, Vgs

3.7Ohm @ 80mA, 4V

Vgs(th) (Max) @ Id

1.3V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

1.58nC @ 10V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

7pF @ 10V

FET Feature

-

Power Dissipation (Max)

150mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70/MCPH3

Package / Case

SC-70, SOT-323