Semiconductors
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| Datasheet | 3LP01C-TB-E |
| File Size | 253.58 KB |
| Total Pages | 6 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | 3LP01C-TB-E, 3LP01C-TB-H |
| Description | MOSFET P-CH 30V 100MA CP, MOSFET P-CH 30V 100MA CP |
3LP01C-TB-E - ON Semiconductor
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URL Link
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Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V Rds On (Max) @ Id, Vgs 10.4Ohm @ 50mA, 4V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 1.43nC @ 10V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 7.5pF @ 10V FET Feature - Power Dissipation (Max) 250mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 3-CP Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V Rds On (Max) @ Id, Vgs 10.4Ohm @ 50mA, 4V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 1.43nC @ 10V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 7.5pF @ 10V FET Feature - Power Dissipation (Max) 250mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 3-CP Package / Case TO-236-3, SC-59, SOT-23-3 |