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| Datasheet | 40EPS12 |
| File Size | 162.5 KB |
| Total Pages | 6 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | 40EPS12, 40EPS08 |
| Description | DIODE GEN PURP 1.2KV 40A TO247AC, DIODE GEN PURP 800V 40A TO247AC |
40EPS12 - Vishay Semiconductor Diodes Division
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Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 40A Voltage - Forward (Vf) (Max) @ If 1.1V @ 40A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100µA @ 1200V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-247-2 Supplier Device Package TO-247AC Modified Operating Temperature - Junction -40°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) 40A Voltage - Forward (Vf) (Max) @ If 1.1V @ 40A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100µA @ 800V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-247-2 Supplier Device Package TO-247AC Modified Operating Temperature - Junction -40°C ~ 150°C |