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ALD110802SCL Datasheet

ALD110802SCL Cover
DatasheetALD110802SCL
File Size105.93 KB
Total Pages12
ManufacturerAdvanced Linear Devices Inc.
Website
Total PartsThis datasheet covers 4 part numbers
Associated Parts ALD110802SCL, ALD110802PCL, ALD110902PAL, ALD110902SAL
Description MOSFET 4N-CH 10.6V 16SOIC, MOSFET 4N-CH 10.6V 16DIP, MOSFET 2N-CH 10.6V 8DIP, MOSFET 2N-CH 10.6V 8SOIC

ALD110802SCL - Advanced Linear Devices Inc.

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ALD110802SCL ALD110802SCL Advanced Linear Devices Inc. MOSFET 4N-CH 10.6V 16SOIC 417

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ALD110802PCL ALD110802PCL Advanced Linear Devices Inc. MOSFET 4N-CH 10.6V 16DIP 342

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ALD110902PAL ALD110902PAL Advanced Linear Devices Inc. MOSFET 2N-CH 10.6V 8DIP 572

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ALD110902SAL ALD110902SAL Advanced Linear Devices Inc. MOSFET 2N-CH 10.6V 8SOIC 579

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URL Link

ALD110802SCL

Advanced Linear Devices Inc.

Manufacturer

Advanced Linear Devices Inc.

Series

EPAD®

FET Type

4 N-Channel, Matched Pair

FET Feature

Standard

Drain to Source Voltage (Vdss)

10.6V

Current - Continuous Drain (Id) @ 25°C

-

Rds On (Max) @ Id, Vgs

500Ohm @ 4.2V

Vgs(th) (Max) @ Id

220mV @ 1µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

2.5pF @ 5V

Power - Max

500mW

Operating Temperature

0°C ~ 70°C (TJ)

Mounting Type

Surface Mount

Package / Case

16-SOIC (0.154", 3.90mm Width)

Supplier Device Package

16-SOIC

ALD110802PCL

Advanced Linear Devices Inc.

Manufacturer

Advanced Linear Devices Inc.

Series

EPAD®

FET Type

4 N-Channel, Matched Pair

FET Feature

Standard

Drain to Source Voltage (Vdss)

10.6V

Current - Continuous Drain (Id) @ 25°C

-

Rds On (Max) @ Id, Vgs

500Ohm @ 4.2V

Vgs(th) (Max) @ Id

220mV @ 1µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

2.5pF @ 5V

Power - Max

500mW

Operating Temperature

0°C ~ 70°C (TJ)

Mounting Type

Through Hole

Package / Case

16-DIP (0.300", 7.62mm)

Supplier Device Package

16-PDIP

ALD110902PAL

Advanced Linear Devices Inc.

Manufacturer

Advanced Linear Devices Inc.

Series

EPAD®

FET Type

2 N-Channel (Dual) Matched Pair

FET Feature

Standard

Drain to Source Voltage (Vdss)

10.6V

Current - Continuous Drain (Id) @ 25°C

-

Rds On (Max) @ Id, Vgs

500Ohm @ 4.2V

Vgs(th) (Max) @ Id

220mV @ 1µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

2.5pF @ 5V

Power - Max

500mW

Operating Temperature

0°C ~ 70°C (TJ)

Mounting Type

Through Hole

Package / Case

8-DIP (0.300", 7.62mm)

Supplier Device Package

8-PDIP

ALD110902SAL

Advanced Linear Devices Inc.

Manufacturer

Advanced Linear Devices Inc.

Series

EPAD®

FET Type

2 N-Channel (Dual) Matched Pair

FET Feature

Standard

Drain to Source Voltage (Vdss)

10.6V

Current - Continuous Drain (Id) @ 25°C

-

Rds On (Max) @ Id, Vgs

500Ohm @ 4.2V

Vgs(th) (Max) @ Id

220mV @ 1µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

2.5pF @ 5V

Power - Max

500mW

Operating Temperature

0°C ~ 70°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOIC