Datasheet | ALD110802SCL |
File Size | 105.93 KB |
Total Pages | 12 |
Manufacturer | Advanced Linear Devices Inc. |
Website | |
Total Parts | This datasheet covers 4 part numbers |
Associated Parts | ALD110802SCL, ALD110802PCL, ALD110902PAL, ALD110902SAL |
Description | MOSFET 4N-CH 10.6V 16SOIC, MOSFET 4N-CH 10.6V 16DIP, MOSFET 2N-CH 10.6V 8DIP, MOSFET 2N-CH 10.6V 8SOIC |
ALD110802SCL - Advanced Linear Devices Inc.
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Advanced Linear Devices Inc. Manufacturer Advanced Linear Devices Inc. Series EPAD® FET Type 4 N-Channel, Matched Pair FET Feature Standard Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs 500Ohm @ 4.2V Vgs(th) (Max) @ Id 220mV @ 1µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 2.5pF @ 5V Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Surface Mount Package / Case 16-SOIC (0.154", 3.90mm Width) Supplier Device Package 16-SOIC |
Advanced Linear Devices Inc. Manufacturer Advanced Linear Devices Inc. Series EPAD® FET Type 4 N-Channel, Matched Pair FET Feature Standard Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs 500Ohm @ 4.2V Vgs(th) (Max) @ Id 220mV @ 1µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 2.5pF @ 5V Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Through Hole Package / Case 16-DIP (0.300", 7.62mm) Supplier Device Package 16-PDIP |
Advanced Linear Devices Inc. Manufacturer Advanced Linear Devices Inc. Series EPAD® FET Type 2 N-Channel (Dual) Matched Pair FET Feature Standard Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs 500Ohm @ 4.2V Vgs(th) (Max) @ Id 220mV @ 1µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 2.5pF @ 5V Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Through Hole Package / Case 8-DIP (0.300", 7.62mm) Supplier Device Package 8-PDIP |
Advanced Linear Devices Inc. Manufacturer Advanced Linear Devices Inc. Series EPAD® FET Type 2 N-Channel (Dual) Matched Pair FET Feature Standard Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs 500Ohm @ 4.2V Vgs(th) (Max) @ Id 220mV @ 1µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 2.5pF @ 5V Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |