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ALD114813PCL Datasheet

ALD114813PCL Cover
DatasheetALD114813PCL
File Size106.4 KB
Total Pages12
ManufacturerAdvanced Linear Devices Inc.
Website
Total PartsThis datasheet covers 4 part numbers
Associated Parts ALD114813PCL, ALD114813SCL, ALD114913PAL, ALD114913SAL
Description MOSFET 4N-CH 10.6V 16DIP, MOSFET 4N-CH 10.6V 16SOIC, MOSFET 2N-CH 10.6V 8DIP, MOSFET 2N-CH 10.6V 8SOIC

ALD114813PCL - Advanced Linear Devices Inc.

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ALD114813SCL ALD114813SCL Advanced Linear Devices Inc. MOSFET 4N-CH 10.6V 16SOIC 316

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ALD114913PAL ALD114913PAL Advanced Linear Devices Inc. MOSFET 2N-CH 10.6V 8DIP 361

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ALD114913SAL ALD114913SAL Advanced Linear Devices Inc. MOSFET 2N-CH 10.6V 8SOIC 720

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URL Link

ALD114813PCL

Advanced Linear Devices Inc.

Manufacturer

Advanced Linear Devices Inc.

Series

EPAD®

FET Type

4 N-Channel, Matched Pair

FET Feature

Depletion Mode

Drain to Source Voltage (Vdss)

10.6V

Current - Continuous Drain (Id) @ 25°C

12mA, 3mA

Rds On (Max) @ Id, Vgs

500Ohm @ 2.7V

Vgs(th) (Max) @ Id

1.26V @ 1µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

2.5pF @ 5V

Power - Max

500mW

Operating Temperature

0°C ~ 70°C (TJ)

Mounting Type

Through Hole

Package / Case

16-DIP (0.300", 7.62mm)

Supplier Device Package

16-PDIP

ALD114813SCL

Advanced Linear Devices Inc.

Manufacturer

Advanced Linear Devices Inc.

Series

EPAD®

FET Type

4 N-Channel, Matched Pair

FET Feature

Depletion Mode

Drain to Source Voltage (Vdss)

10.6V

Current - Continuous Drain (Id) @ 25°C

12mA, 3mA

Rds On (Max) @ Id, Vgs

500Ohm @ 2.7V

Vgs(th) (Max) @ Id

1.26V @ 1µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

2.5pF @ 5V

Power - Max

500mW

Operating Temperature

0°C ~ 70°C (TJ)

Mounting Type

Surface Mount

Package / Case

16-SOIC (0.154", 3.90mm Width)

Supplier Device Package

16-SOIC

ALD114913PAL

Advanced Linear Devices Inc.

Manufacturer

Advanced Linear Devices Inc.

Series

EPAD®

FET Type

2 N-Channel (Dual) Matched Pair

FET Feature

Depletion Mode

Drain to Source Voltage (Vdss)

10.6V

Current - Continuous Drain (Id) @ 25°C

12mA, 3mA

Rds On (Max) @ Id, Vgs

500Ohm @ 2.7V

Vgs(th) (Max) @ Id

1.26V @ 1µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

2.5pF @ 5V

Power - Max

500mW

Operating Temperature

0°C ~ 70°C (TJ)

Mounting Type

Through Hole

Package / Case

8-DIP (0.300", 7.62mm)

Supplier Device Package

8-PDIP

ALD114913SAL

Advanced Linear Devices Inc.

Manufacturer

Advanced Linear Devices Inc.

Series

EPAD®

FET Type

2 N-Channel (Dual) Matched Pair

FET Feature

Depletion Mode

Drain to Source Voltage (Vdss)

10.6V

Current - Continuous Drain (Id) @ 25°C

12mA, 3mA

Rds On (Max) @ Id, Vgs

500Ohm @ 2.7V

Vgs(th) (Max) @ Id

1.26V @ 1µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

2.5pF @ 5V

Power - Max

500mW

Operating Temperature

0°C ~ 70°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOIC