
Datasheet | ALD212908APAL |
File Size | 111.34 KB |
Total Pages | 12 |
Manufacturer | Advanced Linear Devices Inc. |
Website | |
Total Parts | This datasheet covers 4 part numbers |
Associated Parts | ALD212908APAL, ALD212908ASAL, ALD212908SAL, ALD212908PAL |
Description | MOSFET 2N-CH 10.6V 0.08A 8DIP, MOSFET 2N-CH 10.6V 0.08A 8SOIC, MOSFET 2N-CH 10.6V 0.08A 8SOIC, MOSFET 2N-CH 10.6V 0.08A 8DIP |
ALD212908APAL - Advanced Linear Devices Inc.












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Manufacturer Advanced Linear Devices Inc. Series EPAD®, Zero Threshold™ FET Type 2 N-Channel (Dual) Matched Pair FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C 80mA Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Through Hole Package / Case 8-DIP (0.300", 7.62mm) Supplier Device Package 8-PDIP |
Manufacturer Advanced Linear Devices Inc. Series EPAD®, Zero Threshold™ FET Type 2 N-Channel (Dual) Matched Pair FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C 80mA Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
Manufacturer Advanced Linear Devices Inc. Series EPAD®, Zero Threshold™ FET Type 2 N-Channel (Dual) Matched Pair FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C 80mA Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
Manufacturer Advanced Linear Devices Inc. Series EPAD®, Zero Threshold™ FET Type 2 N-Channel (Dual) Matched Pair FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C 80mA Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Through Hole Package / Case 8-DIP (0.300", 7.62mm) Supplier Device Package 8-PDIP |