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AOB11S65L Datasheet

AOB11S65L Cover
DatasheetAOB11S65L
File Size299.89 KB
Total Pages7
ManufacturerAlpha & Omega Semiconductor
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts AOB11S65L
Description MOSFET N-CH 650V 11A TO263

AOB11S65L - Alpha & Omega Semiconductor

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URL Link

AOB11S65L

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

aMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

399mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13.2nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

646pF @ 100V

FET Feature

-

Power Dissipation (Max)

198W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D²Pak)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB