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| Datasheet | AOI1R4A70 |
| File Size | 441.99 KB |
| Total Pages | 6 |
| Manufacturer | Alpha & Omega Semiconductor |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | AOI1R4A70, AOD1R4A70 |
| Description | 700V, A MOSTM N-CHANNEL POWER TR, 700V, A MOSTM N-CHANNEL POWER TR |
AOI1R4A70 - Alpha & Omega Semiconductor
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Manufacturer Alpha & Omega Semiconductor Inc. Series aMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 700V Current - Continuous Drain (Id) @ 25°C 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.4Ohm @ 1A, 10V Vgs(th) (Max) @ Id 4.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 354pF @ 100V FET Feature - Power Dissipation (Max) 48W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-251A Package / Case TO-251-3 Stub Leads, IPak |
Manufacturer Alpha & Omega Semiconductor Inc. Series aMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 700V Current - Continuous Drain (Id) @ 25°C 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.4Ohm @ 1A, 10V Vgs(th) (Max) @ Id 4.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 354pF @ 100V FET Feature - Power Dissipation (Max) 48W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252 (DPAK) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |