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AOI4S60 Datasheet

AOI4S60 Cover
DatasheetAOI4S60
File Size451.69 KB
Total Pages7
ManufacturerAlpha & Omega Semiconductor
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts AOI4S60
Description MOSFET N-CH 600V 4A TO251A

AOI4S60 - Alpha & Omega Semiconductor

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AOI4S60 AOI4S60 Alpha & Omega Semiconductor MOSFET N-CH 600V 4A TO251A 293

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URL Link

AOI4S60

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

aMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

900mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

4.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

263pF @ 100V

FET Feature

-

Power Dissipation (Max)

56.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-251A

Package / Case

TO-251-3 Stub Leads, IPak