Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | AON6370_002 |
| File Size | 261.33 KB |
| Total Pages | 6 |
| Manufacturer | Alpha & Omega Semiconductor |
| Website | |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | AON6370_002, AON6370_001, AON6370 |
| Description | MOSFET N-CH 30V DFN, MOSFET N-CH 30V 8DFN 5X6, MOSFET N-CH 30V 23A DFN |
AON6370_002 - Alpha & Omega Semiconductor
The Products You May Be Interested In
 |
AON6370_002 | Alpha & Omega Semiconductor | MOSFET N-CH 30V DFN | 489 More on Order |
|
AON6370_001 | Alpha & Omega Semiconductor | MOSFET N-CH 30V 8DFN 5X6 | 457 More on Order |
 |
AON6370 | Alpha & Omega Semiconductor | MOSFET N-CH 30V 23A DFN | 395 More on Order |
URL Link
|
Manufacturer Alpha & Omega Semiconductor Inc. Series aMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 23A (Ta), 47A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 7.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 840pF @ 15V FET Feature - Power Dissipation (Max) 6.2W (Ta), 26W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-DFN (5x6) Package / Case 8-VDFN Exposed Pad |
Manufacturer Alpha & Omega Semiconductor Inc. Series aMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 23A (Ta), 47A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 7.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 840pF @ 15V FET Feature - Power Dissipation (Max) 6.2W (Ta), 26W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-DFN (5x6) Package / Case 8-VDFN Exposed Pad |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 23A (Ta), 47A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 7.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 840pF @ 15V FET Feature - Power Dissipation (Max) 6.2W (Ta), 26W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-DFN (5x6) Package / Case 8-PowerSMD, Flat Leads |