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| Datasheet | AOT12N65_001 |
| File Size | 385.81 KB |
| Total Pages | 6 |
| Manufacturer | Alpha & Omega Semiconductor |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | AOT12N65_001, AOT12N65 |
| Description | MOSFET N-CH 30V TO220, MOSFET N-CH 650V 12A TO220 |
AOT12N65_001 - Alpha & Omega Semiconductor
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Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 720mOhm @ 6A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2150pF @ 25V FET Feature - Power Dissipation (Max) 278W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 720mOhm @ 6A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2150pF @ 25V FET Feature - Power Dissipation (Max) 278W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |