Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | AOU3N50 |
| File Size | 276.28 KB |
| Total Pages | 6 |
| Manufacturer | Alpha & Omega Semiconductor |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | AOU3N50, AOD3N50 |
| Description | MOSFET N-CH 500V 2.8A IPAK, MOSFET N-CH 500V 2.8A TO252 |
AOU3N50 - Alpha & Omega Semiconductor
The Products You May Be Interested In
URL Link
|
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 331pF @ 25V FET Feature - Power Dissipation (Max) 57W (Tc) Operating Temperature -50°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-251-3 Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 331pF @ 25V FET Feature - Power Dissipation (Max) 57W (Tc) Operating Temperature -50°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |