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AOU7S65 Datasheet

AOU7S65 Cover
DatasheetAOU7S65
File Size358.23 KB
Total Pages7
ManufacturerAlpha & Omega Semiconductor
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts AOU7S65
Description MOSFET N-CH 600V 7A TO251

AOU7S65 - Alpha & Omega Semiconductor

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AOU7S65 AOU7S65 Alpha & Omega Semiconductor MOSFET N-CH 600V 7A TO251 408

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URL Link

AOU7S65

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

aMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

650mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9.2nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

434pF @ 100V

FET Feature

-

Power Dissipation (Max)

89W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-251-3

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA