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AOWF11N60 Datasheet

AOWF11N60 Cover
DatasheetAOWF11N60
File Size346.04 KB
Total Pages5
ManufacturerAlpha & Omega Semiconductor
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts AOWF11N60
Description MOSFET N-CH 600V 11A TO262F

AOWF11N60 - Alpha & Omega Semiconductor

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AOWF11N60 AOWF11N60 Alpha & Omega Semiconductor MOSFET N-CH 600V 11A TO262F 279

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URL Link

AOWF11N60

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

650mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

37nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1990pF @ 25V

FET Feature

-

Power Dissipation (Max)

27.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262F

Package / Case

TO-262-3 Full Pack, I²Pak