Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | APT1001R1BN |
| File Size | 52.1 KB |
| Total Pages | 4 |
| Manufacturer | Microsemi |
| Website | https://www.microsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | APT1001R1BN |
| Description | MOSFET N-CH 1000V 10.5A TO247AD |
APT1001R1BN - Microsemi
The Products You May Be Interested In
 |
APT1001R1BN | Microsemi | MOSFET N-CH 1000V 10.5A TO247AD | 504 More on Order |
URL Link
www.zouser.com/datasheet/APT1001R1BN
|
Manufacturer Microsemi Corporation Series POWER MOS IV® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 10.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.1Ohm @ 5.25A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2950pF @ 25V FET Feature - Power Dissipation (Max) 310W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AD Package / Case TO-247-3 |