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APTC90H12T2G Datasheet

APTC90H12T2G Cover
DatasheetAPTC90H12T2G
File Size513.49 KB
Total Pages6
ManufacturerMicrosemi
Websitehttps://www.microsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts APTC90H12T2G
Description MOSFET 4N-CH 900V 30A SP2

APTC90H12T2G - Microsemi

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URL Link

APTC90H12T2G

Microsemi

Manufacturer

Microsemi Corporation

Series

CoolMOS™

FET Type

4 N-Channel (H-Bridge)

FET Feature

Super Junction

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

30A

Rds On (Max) @ Id, Vgs

120mOhm @ 26A, 10V

Vgs(th) (Max) @ Id

3.5V @ 3mA

Gate Charge (Qg) (Max) @ Vgs

270nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

6800pF @ 100V

Power - Max

250W

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

SP2

Supplier Device Package

SP2