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| Datasheet | APTM100A23SCTG |
| File Size | 295.3 KB |
| Total Pages | 7 |
| Manufacturer | Microsemi |
| Website | https://www.microsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | APTM100A23SCTG |
| Description | MOSFET 2N-CH 1000V 36A SP4 |
APTM100A23SCTG - Microsemi
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URL Link
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Manufacturer Microsemi Corporation Series - FET Type 2 N-Channel (Half Bridge) FET Feature Silicon Carbide (SiC) Drain to Source Voltage (Vdss) 1000V (1kV) Current - Continuous Drain (Id) @ 25°C 36A Rds On (Max) @ Id, Vgs 270mOhm @ 18A, 10V Vgs(th) (Max) @ Id 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs 308nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 8700pF @ 25V Power - Max 694W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case SP4 Supplier Device Package SP4 |