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APTM100A46FT1G Datasheet

APTM100A46FT1G Cover
DatasheetAPTM100A46FT1G
File Size139.21 KB
Total Pages5
ManufacturerMicrosemi
Websitehttps://www.microsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts APTM100A46FT1G
Description MOSFET 2N-CH 1000V 19A SP1

APTM100A46FT1G - Microsemi

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URL Link

APTM100A46FT1G

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

2 N-Channel (Half Bridge)

FET Feature

Standard

Drain to Source Voltage (Vdss)

1000V (1kV)

Current - Continuous Drain (Id) @ 25°C

19A

Rds On (Max) @ Id, Vgs

552mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

260nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

6800pF @ 25V

Power - Max

357W

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

SP1

Supplier Device Package

SP1