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| Datasheet | APTM100DA40T1G |
| File Size | 145.72 KB |
| Total Pages | 5 |
| Manufacturer | Microsemi |
| Website | https://www.microsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | APTM100DA40T1G |
| Description | MOSFET N-CH 1000V 20A SP1 |
APTM100DA40T1G - Microsemi
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URL Link
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Manufacturer Microsemi Corporation Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 480mOhm @ 16A, 10V Vgs(th) (Max) @ Id 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 6800pF @ 25V FET Feature - Power Dissipation (Max) 357W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SP1 Package / Case SP1 |