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| Datasheet | APTM100TDU35PG |
| File Size | 290.65 KB |
| Total Pages | 6 |
| Manufacturer | Microsemi |
| Website | https://www.microsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | APTM100TDU35PG |
| Description | MOSFET 6N-CH 1000V 22A SP6-P |
APTM100TDU35PG - Microsemi
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APTM100TDU35PG | Microsemi | MOSFET 6N-CH 1000V 22A SP6-P | 490 More on Order |
URL Link
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Manufacturer Microsemi Corporation Series - FET Type 6 N-Channel (3-Phase Bridge) FET Feature Standard Drain to Source Voltage (Vdss) 1000V (1kV) Current - Continuous Drain (Id) @ 25°C 22A Rds On (Max) @ Id, Vgs 420mOhm @ 11A, 10V Vgs(th) (Max) @ Id 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 186nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 5200pF @ 25V Power - Max 390W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case SP6 Supplier Device Package SP6-P |