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| Datasheet | APTM120H57FT3G |
| File Size | 299.16 KB |
| Total Pages | 6 |
| Manufacturer | Microsemi |
| Website | https://www.microsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | APTM120H57FT3G |
| Description | MOSFET 4N-CH 1200V 17A SP3 |
APTM120H57FT3G - Microsemi
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URL Link
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Manufacturer Microsemi Corporation Series - FET Type 4 N-Channel (H-Bridge) FET Feature Standard Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 17A Rds On (Max) @ Id, Vgs 684mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 187nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 5155pF @ 25V Power - Max 390W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case SP3 Supplier Device Package SP3 |