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APTM120SK56T1G Datasheet

APTM120SK56T1G Cover
DatasheetAPTM120SK56T1G
File Size450.96 KB
Total Pages6
ManufacturerMicrosemi
Websitehttps://www.microsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts APTM120SK56T1G
Description MOSFET N-CH 1200V 18A SP1

APTM120SK56T1G - Microsemi

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APTM120SK56T1G APTM120SK56T1G Microsemi MOSFET N-CH 1200V 18A SP1 491

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URL Link

APTM120SK56T1G

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

672mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

300nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

7736pF @ 25V

FET Feature

-

Power Dissipation (Max)

390W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SP1

Package / Case

SP1