Datasheet | AR3PMHM3/87A |
File Size | 91.15 KB |
Total Pages | 5 |
Manufacturer | Vishay Semiconductor Diodes Division |
Website | |
Total Parts | This datasheet covers 12 part numbers |
Associated Parts | AR3PMHM3/87A, AR3PMHM3/86A, AR3PKHM3/87A, AR3PKHM3/86A, AR3PMHM3_A/I, AR3PMHM3_A/H, AR3PKHM3_A/I, AR3PKHM3_A/H, AR3PK-M3/86A, AR3PM-M3/87A, AR3PK-M3/87A, AR3PM-M3/86A |
Description | DIODE AVALANCHE 1KV 1.6A TO277, DIODE AVALANCHE 1KV 1.6A TO277, DIODE AVALANCHE 800V 1.6A TO277A, DIODE AVALANCHE 800V 1.6A TO277A, DIODE AVALANCH 1KV 1.6A TO277A |
AR3PMHM3/87A - Vishay Semiconductor Diodes Division
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AR3PMHM3_A/H | Vishay Semiconductor Diodes Division | DIODE AVALANCH 1KV 1.6A TO277A | 551 More on Order |
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AR3PKHM3_A/I | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 800V 1.6A TO277A | 489 More on Order |
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AR3PKHM3_A/H | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 800V 1.6A TO277A | 342 More on Order |
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Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 1.6A (DC) Voltage - Forward (Vf) (Max) @ If 1.9V @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 120ns Current - Reverse Leakage @ Vr 10µA @ 1000V Capacitance @ Vr, F 34pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 175°C |
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 1.6A (DC) Voltage - Forward (Vf) (Max) @ If 1.9V @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 120ns Current - Reverse Leakage @ Vr 10µA @ 1000V Capacitance @ Vr, F 34pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 175°C |
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) 1.6A (DC) Voltage - Forward (Vf) (Max) @ If 1.9V @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 120ns Current - Reverse Leakage @ Vr 10µA @ 800V Capacitance @ Vr, F 34pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 175°C |
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) 1.6A (DC) Voltage - Forward (Vf) (Max) @ If 1.9V @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 120ns Current - Reverse Leakage @ Vr 10µA @ 800V Capacitance @ Vr, F 34pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 175°C |
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series Automotive, AEC-Q101, eSMP® Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 1.6A Voltage - Forward (Vf) (Max) @ If 1.9V @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 120ns Current - Reverse Leakage @ Vr 10µA @ 800V Capacitance @ Vr, F 34pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 175°C |
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series Automotive, AEC-Q101, eSMP® Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 1.6A Voltage - Forward (Vf) (Max) @ If 1.9V @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 120ns Current - Reverse Leakage @ Vr 10µA @ 800V Capacitance @ Vr, F 34pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 175°C |
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series Automotive, AEC-Q101, eSMP® Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) 1.6A Voltage - Forward (Vf) (Max) @ If 1.9V @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 120ns Current - Reverse Leakage @ Vr 10µA @ 800V Capacitance @ Vr, F 34pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 175°C |
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series Automotive, AEC-Q101, eSMP® Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) 1.6A Voltage - Forward (Vf) (Max) @ If 1.9V @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 120ns Current - Reverse Leakage @ Vr 10µA @ 800V Capacitance @ Vr, F 34pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 175°C |
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) 1.6A (DC) Voltage - Forward (Vf) (Max) @ If 1.9V @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 120ns Current - Reverse Leakage @ Vr 10µA @ 800V Capacitance @ Vr, F 34pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 175°C |
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 1.6A (DC) Voltage - Forward (Vf) (Max) @ If 1.9V @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 120ns Current - Reverse Leakage @ Vr 10µA @ 1000V Capacitance @ Vr, F 34pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 175°C |
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) 1.6A (DC) Voltage - Forward (Vf) (Max) @ If 1.9V @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 120ns Current - Reverse Leakage @ Vr 10µA @ 800V Capacitance @ Vr, F 34pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 175°C |
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 1.6A (DC) Voltage - Forward (Vf) (Max) @ If 1.9V @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 120ns Current - Reverse Leakage @ Vr 10µA @ 1000V Capacitance @ Vr, F 34pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 175°C |